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标题: 这个场管NTE326能用什么代换？ [ [打印本页]

作者: 小彭维修 时间: 2013-2-24 08:44
标题: 这个场管NTE326能用什么代换？ [

工业设备里面的元件
去华强北跑了一个下午，竟然没有1家有这个元件卖，请教一下各位老师这个场管能用其他的场管代换吗？最好是比较容易买到的，谢谢~

NTE326
Silicon P–Channel JFET Transistor
General Purpose AF Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +135°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage V(BR)GSS IG = 10μA, VDS = 0 40 – – V
Gate Reverse Current IGSS VGS = 20V, VDS = 0 – – 5 nA
VGS = 20V, VDS = 0, TA = +100°C – – 1 μA
Gate–Source Cutoff Voltage VGS(off) ID = 1μA, VDS = 15V 1.0 – 7.5 V
Gate–Source Voltage VGS ID = 0.2mA, VDS = 15V 0.8 – 4.5 V
ON Characteristics
Zero–Gate–Voltage Drain Current IDSS VDS = 15V, VGS = 0, f = 1kHz 2 – 9 mA
Small–Signal Characteristics
Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 1500 – 5000 μmho
Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz – – 75 μmho
Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1MHz – 5 7 pF
Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1MHz – 1 2 pF
Functional Characteristics
Noise Figure NF VDS = 15V, VGS = 0, RG = 1MΩ,
f = 100Hz, BW = 1Hz
– 1.0 2.5 dB
Equivalent Short–Circuit Input Noise
Voltage
en VDS = 15V, VGS = 0, f = 100Hz,
BW = 1Hz
– 60 115 nV/Hz

作者: 深兰 时间: 2013-2-25 12:59
一般的 P沟道结型场管，2N5460/1/2 或 SST5460/1/2可代。

作者: 小彭维修 时间: 2013-3-22 12:20
已经从美国买回来了！请大家不要在灌水了~

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