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标题: 主板MOS管请教 [打印本页]

作者: 江涨 时间: 2007-9-18 03:06
标题: 主板MOS管请教
一INTEL845GL的主板，开机不加电，终于发现一供电MOS管击穿，三个脚都通了，MOS管上面标有“D0233 FDD 6680A",高手能不能解释一下上面的意思，6680A是MOS管的型号吗？

作者: 至少还有你 时间: 2007-9-18 08:10
这是个MOS管

下面是它的PDF参数

FDD6680A.pdf

90.08 KB, 下载次数: 342, 下载积分: 下载分 -2 分, 下载 1 次

作者: 江涨 时间: 2007-9-18 14:37
非常感谢楼上兄弟。。。。。

作者: 江涨 时间: 2007-9-19 02:03
想看不能下载，郁闷。。。。

作者: 尼可 时间: 2007-9-19 02:23
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Continuous Drain Current @TC=25°C (Note 3) 56 A
@TA=25°C (Note 1a) 14
Pulsed (Note 1a) 100
Power Dissipation @TC=25°C (Note 3) 60
@TA=25°C (Note 1a) 2.8
PD
@TA=25°C (Note 1b) 1.3
W
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.1 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6680A FDD6680A D-PAK (TO-252) 13’’ 12mm 2500 units
FDU6680A FDU6680A I-PAK (TO-251) Tube N/A 75
FDD6680A/FDU6680A

作者: 尼可 时间: 2007-9-19 02:23
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=14A 200 mJ
IAS Drain-Source Avalanche Current 56 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 μA 30 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA,Referenced to 25°C 23 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA
IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 1 1.5 3 V
ΔVGS(th)
ΔTJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 μA,Referenced to 25°C
-4 mV/°C
RDS(on) Static Drain–Source
On–Resistance
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 12 A
VGS = 10 V, ID = 14 A,TJ=125°C
8
10
12
9.5
13
16
mΩ
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 5 V, ID = 9.5 A 41 S
Dynamic Characteristics
Ciss Input Capacitance 2180 pF
Coss Output Capacitance 500 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
255 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 13 24 ns
tr Turn–On Rise Time 14 26 ns
td(off) Turn–Off Delay Time 43 70 ns
tf Turn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
15 27 ns
Qg Total Gate Charge 23 33 nC
Qgs Gate–Source Charge 7 nC
Qgd Gate–Drain Charge
VDS = 40V, ID = 9.5 A,
VGS = 5 V
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.3 A
VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 0.72 1.2 V

作者: 殷冲 时间: 2007-9-19 12:46
3脚都通吗？
下下来短路各脚再测好不好
几脚之间只有1个阻值多一个少一个就坏

作者: 潘明星 时间: 2007-9-20 10:36
一般坏了就换了没有那么麻烦吧

作者: 我心地飞翔 时间: 2007-9-20 11:06
N沟道场效应管　56A　30V

作者: 殷冲 时间: 2007-9-20 12:24
记住一条就可以:二极管只有一个阻值,三极管有2个阻值,场效应管有一个阻值就可以
测阻值时最好把他们的脚短路一下,阻值个数不能多也不能少,否则就是坏的.

作者: 闫川川 时间: 2007-9-20 16:13
找个大小参不多换上就行.主板的上MOS管都是通用的...

作者: 邹木芹 时间: 2007-9-24 13:45
有没有简单点的介绍MOS管的电压和耐压以及型号的?还有相互的可代换型号.
想找一个常用的总的清单,上面才介绍了一种,参数也非常的多,
像我这样的新手看不懂,
想多了解一些,谢谢!

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