UFS 2.1版更新包括加入设备的健康状态描述,其中提供有关设备使用寿命的详细信息,有助于UFS技术的大部份应用;由于支持预防性维护,因此特别适用于汽车电子领域。指令优先功能透过软件为更迫切的任务分配较高优先级,从而有助于提高系统性能;同时,增加安全写入保护,支持现代高阶操作系统与应用所要求的精细粒度写入保护应用。JESD220C Universal Flash Storage version 2.1 offers key improvements over earlier versions and will provide data security through the use of inline cryptography between the SoC and UFS Storage device. UFS 2.1 defines the following updates over the prior version of the standard:a) Inclusion of a Device Health Descriptor: the descriptor provides detailed information on the life of a device, thus allowing for better preventative maintenance, which is advantageous to most areas of the market and especially important in the automotive market.b) Addition of Secure Write Protection: this allows for the use of fine-grained write protection as required by modern high-level operating systems (OS) and applications.c) Field Firmware Update: enables the device vendor to improve performance and implement bug fixes, as well as facilitating the addition of new features in products that have already shipped to end customers.d) Command priority: improves system performance, allowing the software to assign higher priority to more urgent tasks.
Toshiba’s NAND flash memories (NAND) with an integrated controller provide error correction, wear leveling, bad-block management, and more. Their interface is compliant with JEDEC/UFS Version.2.0, eliminating the need for users to perform NAND-specific control.东芝的UFS2.1系列NAND闪存,具有集成的错误纠正、wear leveling、坏区块管理等功能。UFS2.1闪存的接口与UFS2.0是兼容的。东芝UFS2.1推出时宣传(2016年10月27日):东芝发布UFS 2.1闪存:15nm MLC,读取速度850MB/s
东芝推出的新品直接基于最新的UFS 2.1规范,使用了15nm MLC闪存,容量也是32GB到128GB,不过性能就更强大了,连续读取速度850MB/s,连续写入180MB/s,比前代提升40%、16%,随机读取、写入更是提升120%、80%。这里的“前代”就是THGB系列的UFS2.0,而速度(特别是随机读写)性能相对有所提高的是THGA系列的UFS2.1。这个速度提升不是标准规定所带来的,而是因为它是新产品。
“ 值得一提的是,这次 iFixit 拆解的 S8,使用的是东芝的‘THGBF7G9L4LBATR’快闪记忆卡,并采用的 UFS 2.0 标准;然而 S8+ 却使用 UFS 2.1 的‘THGAF4G9N4LBAIR’,比 UFS 2.0 快了大约 50%。尽管三星在规格上没有多提这件事,但如果很在意记忆卡速度,可能还是选购 S8+ 较佳。”注意到芯片型号了么?
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